Title of article
Polarisation-switching-induced resistance change in ferroelectric Mg-doped LiNbO/sub 3/ single crystals
Author/Authors
K.، Yamamoto, نويسنده , , K.، Mizuuchi, نويسنده , , A.، Morikawa, نويسنده , , T.، Sugita, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-818
From page
819
To page
0
Abstract
Reversible resistance change at room temperature by polarisation switching is reported in ferroelectric single crystals. Resistance switching up to six orders of magnitude in Mg-doped LiNbO/sub 3/ was found. The resistance change is caused by the polarisation switching and increases with Mg concentration. Based on these results, continuous switching properties and memory behaviours were demonstrated.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107485
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