Author/Authors :
M.، Garcia-Gracia, نويسنده , , A.، Ouvrard, نويسنده , , A.، Garnache, نويسنده , , L.، Cerutti, نويسنده , , E.، Cerda, نويسنده , , F.، Genty, نويسنده ,
Abstract :
Operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.36 (mu)m is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A circular TEM/sub 00/ low-divergence laser operation is demonstrated in continuous-wave mode operation from 268 up to 308K. A threshold of 5.5 kW/cm/sup 2/ at 268K has been measured.
