Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser

A buried heterostructure based on Fe-doped InP semi-insulating layers is optimised for both high output power and large modulation bandwidth operations up to 70(degree)C in a 10 Gbit/s directly modulated 1.3 (mu)m InGaAsP/InP distributed feedback laser. The slope efficiency of 0.19 W/A and -3 dB bandwidth of 10 GHz at 1.5 times threshold current is demonstrated experimentally.