Analysis of electrical and thermal responses of n-doped silicon to an impinging electron beam and joule heating

A detailed numerical simulation for electron-beam heating of n-doped silicon is presented. Electron-beam penetration is modeled using electron-beam transport equation (EBTE). The EBTE is solved by using a Monte Carlo (MC) method to determine the electron deposition distributions, including electron density deposition and optical phonon generation. Electron and phonon temperatures of the film are then determined using electron–phonon hydrodynamic equations (EPHDEs) coupled with the deposition distributions obtained from the MC simulation. The combined EBTE and EPHDEs results indicate that an electron beam creates a depletion region near the surface of incidence and causes non-equilibrium between electron and phonon temperatures.