Title of article
IMPATT oscillation in SiC p/sup +/-n/sup -/-n/sup +/ diodes with a guard ring formed by vanadium ion implantation
Author/Authors
M.، Arai, نويسنده , , S.، Ono, نويسنده , , C.، Kimura, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1025
From page
1026
To page
0
Abstract
SiC impact avalanche and transit time (IMPATT) diodes with a guard ring formed by vanadium ion implantation showed a peak output power of 1.8 W at 11.93 GHz. The guard ring reduced the electric field near the diodeʹs periphery and reduced the device temperature.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107620
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