Title of article :
Effect of static magnetic field on a thermal conductivity measurement of a molten droplet using an electromagnetic levitation technique
Author/Authors :
Takao Tsukada، نويسنده , , Kenichi Sugioka، نويسنده , , Tomoya Tsutsumino، نويسنده , , Hiroyuki Fukuyama and Kazuhiro Nagata ، نويسنده , , Hidekazu Kobatake، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
6
From page :
5152
To page :
5157
Abstract :
Recently, a novel method of measuring the thermophysical properties, particularly thermal conductivity, of high-temperature molten materials using the electromagnetic levitation technique has been developed by Kobatake et al. [H. Kobatake, H. Fukuyama, I. Minato, T. Tsukada, S. Awaji, Noncontact measurement of thermal conductivity of liquid silicon in a static magnetic field, Appl. Phys. Lett. 90 (2007) 094102]; this method is based on a periodic laser-heating method, and entails the superimposing of a static magnetic field to suppress convection in an electromagnetically levitated droplet. In this work, to confirm the fact that a static magnetic field really suppresses convection in a molten silicon droplet in an electromagnetic levitator, numerical simulations of convection in the droplet and periodic laser heating in the presence of convection have been carried out. Here, the convections driven by buoyancy force, thermocapillary force due to the temperature dependence of the surface tension on the melt surface, and electromagnetic force in the droplet were considered. As a result, it was found that applying a static magnetic field of 4 T can suppress convection in a molten silicon droplet enough to measure the real thermal conductivity of molten silicon.
Keywords :
Electromagnetic levitation , Static magnetic field , Convection , Droplet , Thermal conductivity , Numerical simulation , Molten silicon
Journal title :
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
Serial Year :
2009
Journal title :
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
Record number :
1076301
Link To Document :
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