Author/Authors :
Y.، Sato, نويسنده , , T.، Hino, نويسنده , , M.، Yokozeki, نويسنده , , J.، Mitomo, نويسنده , , H.، Narui, نويسنده ,
Abstract :
Room-temperature continuous-wave operation of a 1.5 (mu)m range GaInNAs laser grown by metal organic chemical vapour deposition is reported. The lasing wavelength of the GaInNAs/GaAs double quantum well laser was 1.50 (mu)m and the threshold current was 245 mA. The characteristic temperature between 10 and 50(degree)C was about 119 K under pulse operation.
