Title of article
1.50 (mu)m CW operation of GaInNAs/GaAs laser diodes grown by MOCVD
Author/Authors
Y.، Sato, نويسنده , , T.، Hino, نويسنده , , M.، Yokozeki, نويسنده , , J.، Mitomo, نويسنده , , H.، Narui, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-105
From page
106
To page
0
Abstract
Room-temperature continuous-wave operation of a 1.5 (mu)m range GaInNAs laser grown by metal organic chemical vapour deposition is reported. The lasing wavelength of the GaInNAs/GaAs double quantum well laser was 1.50 (mu)m and the threshold current was 245 mA. The characteristic temperature between 10 and 50(degree)C was about 119 K under pulse operation.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107641
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