Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O/sub 3//BaRuO/sub 3/ structure

A nonvolatile current sensing device using Pb(Zr/sub 0.52/,Ti/sub 0.48/)O/sub 3/ (PZT) as a gate and BaRuO/sub 3/ (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.