Over 1.3 (mu)m CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate

An Sb-based quantum-dot vertical-cavity surface-emitting laser (QD-VCSEL) operating in the 1.3 (mu)m optical communication waveband is presented. A QD-VCSEL containing high-density InGaSb QDs in the active region is fabricated on GaAs substrate. The density of InGaSb QDs is drastically increased using a new method of an Si atom irradiation technique. A long-wavelength laser emission at 1.34 (mu)m is successfully achieved on the InGaSb QD-VCSEL in CW operation at room temperature.