Author/Authors :
A.Q.، Liu, نويسنده , , M.، Tang, نويسنده , , W.، Palei, نويسنده , , Alphones، A نويسنده ,
Abstract :
A single-pole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported. This simplified SP4T micromachined switch is developed using deep reactive ion etching fabrication technology based on silicon-oninsulator wafer. The measurement results of the SP4T switch show an insertion loss of less than 1 dB and isolation of 30 dB from DC to 6 GHz.
