Title of article
Method for extracting series resistance in MOS devices using Fowler-Nordheim plot
Author/Authors
E.، Miranda, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1152
From page
1153
To page
0
Abstract
A new method for determining the series resistance affecting the tunnelling current in MOS devices is presented. The proposed approach consists of considering the effect of the potential drop associated with this resistance on the Fowler-Nordheim tunnelling expression. The resistance is found by forcing the highest possible linearity of the Fowler-Nordheim plot.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107704
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