Title of article
Raman emission in porous silicon at 1.54 (mu)m
Author/Authors
B.، Jalali, نويسنده , , A.، De Rossi, نويسنده , , L.، Sirleto, نويسنده , , V.، Raghunatan, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1220
From page
1221
To page
0
Abstract
There have been many reports regarding visible luminescence and light emission at 1.54 (mu)m, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. Described is a different approach, based on Raman scattering in porous silicon, to generate radiation at 1.54 (mu)m. Preliminary experimental results regarding Raman emission in porous silicon samples at 1.54 (mu)m are also reported.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107748
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