Author/Authors :
L.F.، Eastman, نويسنده , , A.P.، Zhang, نويسنده , , E.B.، Kaminsky, نويسنده , , A.F.، Allen, نويسنده , , J.W.، Hedrick, نويسنده , , A.، Vertiatchikh, نويسنده ,
Abstract :
The stability of high-power AlGaN/GaN HEMTs under DC and RF stresses was evaluated. For 50 hours of DC stresses, 100 (mu)m devices exhibited ~3% full-channel drain current degradation within the first few minutes and another ~1% current loss during the rest of the stress period. In response to the RF stresses under pulsed conditions at 2.8 GHz, the output power of 1.5 mm devices degraded by ~13% after 108 hours of stress. Current DLTS measurements revealed the creation of a 0.4 eV trap from the stressed and aged devices.
