Electrical isolation of InP and InGaAs using iron and krypton

Both n-type InP and InGaAs layers are electrically isolated using iron and krypton ion implantation at 77K to create thermally-stable highly resistive regions. The data suggests that, in both InP and InGaAs, chemical induced compensation operates above a post-implant annealing temperature of 500(degree)C for iron implant isolation. However, in the case of krypton, damage induced isolation is the only compensation mechanism responsible for electrical isolation in both materials. The isolation scheme used looks promising to III-V semiconductor industries since such high sheet resistance values (~10/sup 7/ (omega)/sq) with a broad thermally-stable window are obtained for both n-type InP and InGaAs materials.