InP/GaAsSb type-II DHBTs with f/sub T/>350 GHz

Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak f/sub T/ of 358 GHz. The device consists of a 0.35*8 (mu)m emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BV/sub CEO/>4 V and a maximum DC current gain ((beta)) of 19. The peak RF operating collector current density exceeds 900 kA/cm/sup 2/.