Title of article
InP/GaAsSb type-II DHBTs with f/sub T/>350 GHz
Author/Authors
M.، Feng, نويسنده , , B.F.، Chu-Kung, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1304
From page
1305
To page
0
Abstract
Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak f/sub T/ of 358 GHz. The device consists of a 0.35*8 (mu)m emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BV/sub CEO/>4 V and a maximum DC current gain ((beta)) of 19. The peak RF operating collector current density exceeds 900 kA/cm/sup 2/.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107805
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