Title of article
Reliable non-Zn-diffused InP/InGaAs avalanche photodiode with buried n-InP layer operated by electron injection mode
Author/Authors
T.، Ito, نويسنده , , T.، Takeshita, نويسنده , , H.، Ito, نويسنده , , T.، Ishibashi, نويسنده , , Y.، Muramoto, نويسنده , , S.، Ando, نويسنده , , Y.، Hirota, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-1377
From page
1378
To page
0
Abstract
A new InP-based avalanche photodiode with a p-type neutral absorption layer and a buried n-contact has been developed. From the test results, it is confirmed that the device has good receiver performance, with a minimum sensitivity of -26.8 dBm at 10 Gbit/s, and sufficient reliability.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107852
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