Author/Authors :
J.، Zhang, نويسنده , , J.H.، Feng Yan Zhao, نويسنده , , P.، Alexandrov, نويسنده , , T.، Burke, نويسنده ,
Abstract :
The first demonstration is reported of a high-voltage (9.2 kV) 4H-SiC bipolar junction transistor (BJT) based on a 50 (mu)m, 7*10/sup 14/ cm/sup -3/ doped drift layer, achieving an emitter current density of 150 A/cm/sup 2/ at V/sub CEO/=5 V, suggesting a specific on-resistance (R/sub SP_ON/) of 33 m(omega) cm/sup 2/ without considering current spreading or 49 m(omega) cm/sup 2/ if current spreading is considered. The result far exceeds the previous 4H-SiC BJT record of 3.2 kV with R/sub SP_ON/=78 m(omega) cm/sup 2/.
