Author/Authors :
M.، Hopkinson, نويسنده , , H.Y.، Liu, نويسنده , , I.R.، Sellers, نويسنده , , K.M.، Groom, نويسنده , , D.T.، Childs, نويسنده , , D.، Robbins, نويسنده , , T.J.، Badcock, نويسنده , , D.J.، Mowbray, نويسنده , , M.S.، Skolnick, نويسنده ,
Abstract :
A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 (mu)m multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm/sup 2/ are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.
