Author/Authors :
G.، Scarpa, نويسنده , , M.-C.، Amann, نويسنده , , A.، Friedrich, نويسنده , , G.، Boehm, نويسنده ,
Abstract :
5.8 (mu)m Ga/sub 0.4/In/sub 0.6/As/Al/sub 0.56/In/sub 0.44/As strain-compensated quantum-cascade lasers with InP and GaInAs cladding layers using solid-source molecular-beam epitaxy have been fabricated. Low threshold current densities and high-temperature operation of uncoated devices, with a record value of 490 K, have been achieved in pulsed mode.
