Author/Authors :
P.، Saunier, نويسنده , , R.، Birkhahn, نويسنده , , S.، Guo, نويسنده , , B.، Albert, نويسنده , , C.، Lee, نويسنده , , H.، Tserng, نويسنده , , L.، Witkowski, نويسنده , , G.، Munns, نويسنده ,
Abstract :
The effects of RF stress on power and pulsed IV characteristics of field-plated AlGaN/GaN HEMTs fabricated on two different epitaxial structures are presented. The power degradation characteristics are shown. The RF stress resulted in different degrees of RF voltage and current swing reduction on the two wafers. The current dispersion became more aggravated after RF stress under high quiescent drain bias conditions in one of the structures.
