Author/Authors :
O.، Pronic, نويسنده , , G.، Mitic, نويسنده , , J.، Randelovic, نويسنده , , V.، Markovic, نويسنده ,
Abstract :
A procedure for accurate prediction of noise parameters of microwave MESFETs/HEMTs against temperature is proposed. The error correction functions calculated for one temperature are used for efficient transistor noise parameter modelling for various device ambient temperatures, as is shown by an example of packaged HEMT noise modelling.
