Author/Authors :
Mikihiro Nomura، نويسنده , , Hitoshi Aida، نويسنده , , Suraj Gopalakrishnan، نويسنده , , Takashi Sugawara، نويسنده , , Shin-ichi Nakao، نويسنده , , Satoshi Yamazaki
، نويسنده , , Takeshi Inada، نويسنده , , Yuji Iwamoto، نويسنده ,
Abstract :
A silica membrane having an excellent H2/N2 permeance ratio (over 800) was prepared by the counter-diffusion chemical vapor deposition method. The H2/N2 permeance ratio was kept for 82 h under 76 kPa of steam at 773 K. The H2/H2O permeance ratio through the silica membrane was ca. 300 at 773 K. This is much higher than that through silica membranes prepared by a sol-gel method. The deposited silica layer was found in the γ-alumina layer of the substrate by TEM observations, indicating that the silica deposition is controlled by counter-diffusion of the precursors. Steam stability tests for porous γ-alumina substrates are also discussed. Pore size of the γ-alumina layer increased with an increasing steam treatment period at 773 K. The pore size of the γ-alumina layer was ca. 9 nm after 52 h of steam treatment.
Keywords :
Counter-diffusion CVD , Silica membrane , Alumina substrate , TEM observation