Pulsed laser deposition of carbon nitride thin films from graphite targets Original Research Article

Carbon nitride thin films were synthesized on Si(100) substrates by a pulsed Nd:YAG laser deposition. The laser beam is incident on the high-purity graphite targets. The films are grown using an energy density 3.8 J cm−2 at a laser repetition rate of 10 Hz. The nitrogen gas pressure in the chamber is 10.0 Pa. Morphology features of the films have been obtained by employing the technique of scanning electron microscopy. Auger electron spectroscopy has been used to obtain compositional information about the films. The NC composition ratio was found to vary from zero to 0.32 depending on deposition conditions. IR absorption spectra show two characteristic bands: a broad band composed of the graphite G-band and disordered D-band of carbon, and another associated with CN triple bonds. Raman spectra have also been used to characterize the films.