Title of article :
Doping of diamond Original Research Article
Author/Authors :
R. Kalish، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
5
From page :
781
To page :
785
Abstract :
Diamond is a wide-bandgap semiconductor with unsurpassed physical and chemical properties. When doped, semiconducting diamond can lead to the realization of electronic and optoelectronic devices with exceptional properties. Diamond can now be doped p-type, with boron, both during CVD diamond film growth and by ion-implantation, and n-type with phosphorus during CVD growth. This paper reviews the current status of diamond doping and describes the electronic properties of the doped layers. Some potential applications of doped semiconducting diamond are described.
Keywords :
B. Doping , CVD , Implantation , D. electronic properties , A. Diamond
Journal title :
Carbon
Serial Year :
1999
Journal title :
Carbon
Record number :
1117902
Link To Document :
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