Title of article :
Fractal dimension analysis of polyacenic semiconductive (PAS) materials Original Research Article
Author/Authors :
Kazuyoshi Tanaka، نويسنده , , Akihiro Ito، نويسنده , , Takao Yoshii، نويسنده , , Shoji Suehiro، نويسنده , , Satoshi Nagura، نويسنده , , Nobuo Ando، نويسنده , , Yukinori Hato، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
5
From page :
1599
To page :
1603
Abstract :
The fractal dimensions D of the pristine and the Li-doped polyacenic semiconductive (PAS) materials have been analyzed by small-angle X-ray scattering (SAXS) and compared with that of graphite. It has become clear that the Li doping generally makes D smaller, which suggests fixation effect of the nanopores on the surface of the material by the doped Li atoms. It is pointed out that the fractal dimension analysis affords an alternative picture to the conventional N2 adsorption and rather new technique using 129Xe nuclear magnetic resonance method in discussion of the surface structures for general amorphous carbon particularly when it is doped or mixed with binders.
Keywords :
A. Non-graphitic carbon , B. Doping , C. small angle x-ray scattering
Journal title :
Carbon
Serial Year :
2001
Journal title :
Carbon
Record number :
1118501
Link To Document :
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