Author/Authors :
Hui Gao، نويسنده , , Li Song، نويسنده , , Wenhua Guo، نويسنده , , Liang Huang، نويسنده , , Dezheng Yang، نويسنده , , Fangcong Wang، نويسنده , , Yalu Zuo، نويسنده , , Xiaolong Fan، نويسنده , , Zheng Liu، نويسنده , , Wei Gao، نويسنده , , Robert Vajtai، نويسنده , , Ken Hackenberg، نويسنده , , Pulickel M. Ajayan Jonghwan Suhr
Nikhil Koratkar، نويسنده ,
Abstract :
Large area nitrogen (N)-doped graphene films were grown on copper foil by chemical vapor deposition. The as-grown films consisted of a single atomic layer that was continuous across the copper surface steps and grain boundaries, and could be easily transferred to a variety of substrates. N-doping was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental mapping. N atoms were suggested to mainly form a “pyrrolic” nitrogen structure, and the doping level of N reached up to 3.4 at.%. The N-doped graphene exhibited an n-type behavior, and nitrogen doping would open a band gap in the graphene. This study presents use of a new liquid precursor to obtain large area, continuous and mostly single atom layer N-doped graphene films.
