Author/Authors :
S.P. Cooil، نويسنده , , F. Song، نويسنده , , G.T. Williams، نويسنده , , O.R. Roberts، نويسنده , , D.P. Langstaff، نويسنده , , B. J?rgensen، نويسنده , , K. H?ydalsvik، نويسنده , , D.W. Breiby، نويسنده , , E. Wahlstr?m، نويسنده , , D.A. Evans، نويسنده , , J.W. Wells، نويسنده ,
Abstract :
Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp3 to sp2 carbon. In comparison with the bare SiC (0 0 0 1) surface, the graphitization temperature is reduced from over 1000 °C to 600 °C and for diamond (1 1 1), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures.
