Author/Authors :
Nikroo، A. نويسنده , , h.huang، نويسنده , , r.b.stephens، نويسنده , , s.a.eddinger، نويسنده , , j.gunther، نويسنده , , k.c.chen، نويسنده , , h.w.xu، نويسنده ,
Abstract :
we have developed the only non destructive technique to profile graded dopants in ICF shells to the precision required by the NIF specification(droping level must be accurate to 0.03 at % and its radial distribution accurate to submicron precision).this quantitative contact radiography method was based on precision film digitization and a dopant simulation model. the measurements on Cu/Be and Ge/Ch shenlls agree with those from electron microprobe and X-ray fluorescence.
