Author/Authors :
Chen، K. C. نويسنده , , Stephens، R. B. نويسنده , , Nikroo، A. نويسنده , , Huang، H. نويسنده , , Eddinger، S. A. نويسنده , , Gunther، J. نويسنده , , Xu، H. W. نويسنده ,
Abstract :
We have developed the only non-destructive technique to profile graded dopants in ICF shells to the precision required by the NIF specifications (Doping level must be accurate to 0.03 at. % and its radial distribution accurate to submicron precision). This quantitative contact radiography method was based on precision film digitization and a dopant simulation model. The measurements on Cu\Be and Ge/CH shells agree with those from electron microprobe and X-ray fluorescence.
