A hybrid upwind scheme to reduce the crosswind diffusion inherent in the SG scheme for semiconductor device simulations Original Research Article

Considering the properties of the SG formulation and the TVD formulation, this paper presents a hybrid upwind scheme to reduce the crosswind diffusion inherent in the SG scheme for semiconductor device simulations and substitutes it for the SG scheme in MINIMOS 4.0. The discretization equations are solved by the ILUCGS scheme. The numerical results of semiconductor devices show that the crosswind diffusion has a significant influence, especially on the carrier density distributions.