Title of article
Detailed check of the LDA + U and GGA + U corrected method for defect calculations in wurtzite ZnO Original Research Article
Author/Authors
Gui-Yang Huang، نويسنده , , Chong-Yu Wang، نويسنده , , Jiantao Wang، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2012
Pages
4
From page
1749
To page
1752
Abstract
Based on a detailed check of the LDA + U and GGA + U corrected methods, we found that the transition energy levels depend almost linearly on the effective U parameter. GGA + U seems to be better than LDA + U, with effective U parameter of about 5.0 eV. However, though the results between LDA and GGA are very different before correction, the corrected transition energy levels spread less than 0.3 eV. These more or less consistent results indicate the necessity and validity of LDA + U and GGA + U correction.
Keywords
ZnO , First-principles , LDA + U and GGA + U , Band-gap problems
Journal title
Computer Physics Communications
Serial Year
2012
Journal title
Computer Physics Communications
Record number
1138628
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