Static recrystallization of SiO2-particle containing {011}<100> copper single crystals Original Research Article

{011}<100> Cu single crystals with dispersed SiO2 particles ranging in diameter from 0.1–0.2 μm were statically recrystallized after cold-rolling to 20% and 40% reduction. When compared with the result on pure copper, recrystallization was found to be accelerated by the dispersed fine particles even though no obvious deformation zone had evolved around the particles. Recrystallization was found decelerated with increasing particle volume fraction. Nucleation was observed to take place at the particle/matrix interface. Upon recrystallization misorientation and grain-boundary character distribution seemed to become almost random. This is attributed to particle stimulated nucleation and twinning of migrating subboundaries.