Title of article :
Spreading and solidification behavior of molten Si droplets impinging on substrates Original Research Article
Author/Authors :
K. Nagashio and K. Kuribayashi ، نويسنده , , Glen H. Murata، نويسنده , , K. Kuribayashi، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
7
From page :
5295
To page :
5301
Abstract :
This paper focuses on an effect of initial undercoolings on the spreading and solidification behavior of Si dropped on a silicon wafer, which was directly observed through it by the infrared imaging system. For an overheated droplet, the melt spreading occurred first and solidified later. The final splat shape was a typical disc. On the other hand, for a droplet with large initial undercooling, the solidification took place at the faster rate than the melt spreading, which resulted in a spherical shape of final splat. It is indicated that the final shape is considerably affected by the initial undercooling in the measurable-scale experiment with large droplets (∼mm size) and low impingement rates (∼m/s order). Moreover, equiaxed grains were found throughout the quenched surface by an electron backscatter pattern analysis. That is, the microstructure formation was nucleation-controlled since the growth parallel to the substrate was suppressed by the time-dependent contact of melt/substrate governed by the melt deformation.
Keywords :
Electron backscatter pattern , Undercooling , Infrared spectroscopy , Splat quenching , Semiconductor
Journal title :
ACTA Materialia
Serial Year :
2004
Journal title :
ACTA Materialia
Record number :
1141096
Link To Document :
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