• Title of article

    Spreading and solidification behavior of molten Si droplets impinging on substrates Original Research Article

  • Author/Authors

    K. Nagashio and K. Kuribayashi ، نويسنده , , Glen H. Murata، نويسنده , , K. Kuribayashi، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2004
  • Pages
    7
  • From page
    5295
  • To page
    5301
  • Abstract
    This paper focuses on an effect of initial undercoolings on the spreading and solidification behavior of Si dropped on a silicon wafer, which was directly observed through it by the infrared imaging system. For an overheated droplet, the melt spreading occurred first and solidified later. The final splat shape was a typical disc. On the other hand, for a droplet with large initial undercooling, the solidification took place at the faster rate than the melt spreading, which resulted in a spherical shape of final splat. It is indicated that the final shape is considerably affected by the initial undercooling in the measurable-scale experiment with large droplets (∼mm size) and low impingement rates (∼m/s order). Moreover, equiaxed grains were found throughout the quenched surface by an electron backscatter pattern analysis. That is, the microstructure formation was nucleation-controlled since the growth parallel to the substrate was suppressed by the time-dependent contact of melt/substrate governed by the melt deformation.
  • Keywords
    Electron backscatter pattern , Undercooling , Infrared spectroscopy , Splat quenching , Semiconductor
  • Journal title
    ACTA Materialia
  • Serial Year
    2004
  • Journal title
    ACTA Materialia
  • Record number

    1141096