Title of article
Self-interstitial transport in vanadium Original Research Article
Author/Authors
Luis A. Zepeda-Ruiz، نويسنده , , J?rg Rottler، نويسنده , , Brian D. Wirth، نويسنده , , Roberto Car، نويسنده , , David J. Srolovitz، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
10
From page
1985
To page
1994
Abstract
We study the diffusion of self-interstitial atoms (SIAs) and SIA clusters in vanadium via molecular dynamics simulations with an improved Finnis–Sinclair potential (fit to first-principles results for SIA structure and energetics). The present results demonstrate that single SIAs exist in a 〈1 1 1〉-dumbbell configuration and migrate easily along 〈1 1 1〉 directions. Changes of direction through rotations into other 〈1 1 1〉 directions are infrequent at low temperatures, but become prominent at higher temperatures, thereby changing the migration path from predominantly one-dimensional to almost isotropically three-dimensional. SIA clusters (i.e., clusters of 〈1 1 1〉-dumbbells) can be described as perfect prismatic dislocation loops with Burgers vector and habit planes of 1/2〈1 1 1〉{2 2 0} that migrate only along their glide cylinder. SIA clusters also migrate along 〈1 1 1〉-directions, but do not rotate. Both single SIAs and their clusters exhibit a highly non-Arrhenius diffusivity, which originates from a combination of a temperature dependent correlation factor and the presence of very low migration barriers. At low temperature, the diffusion is approximately Arrhenius, while above room temperature, the diffusivity is a linear function of temperature. A simple model is proposed to describe these diffusion regimes and the transition between them.
Keywords
molecular dynamics simulation , Vanadium , Interstitial , Diffusion , Dislocation loop
Journal title
ACTA Materialia
Serial Year
2005
Journal title
ACTA Materialia
Record number
1141335
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