• Title of article

    Self-interstitial transport in vanadium Original Research Article

  • Author/Authors

    Luis A. Zepeda-Ruiz، نويسنده , , J?rg Rottler، نويسنده , , Brian D. Wirth، نويسنده , , Roberto Car، نويسنده , , David J. Srolovitz، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2005
  • Pages
    10
  • From page
    1985
  • To page
    1994
  • Abstract
    We study the diffusion of self-interstitial atoms (SIAs) and SIA clusters in vanadium via molecular dynamics simulations with an improved Finnis–Sinclair potential (fit to first-principles results for SIA structure and energetics). The present results demonstrate that single SIAs exist in a 〈1 1 1〉-dumbbell configuration and migrate easily along 〈1 1 1〉 directions. Changes of direction through rotations into other 〈1 1 1〉 directions are infrequent at low temperatures, but become prominent at higher temperatures, thereby changing the migration path from predominantly one-dimensional to almost isotropically three-dimensional. SIA clusters (i.e., clusters of 〈1 1 1〉-dumbbells) can be described as perfect prismatic dislocation loops with Burgers vector and habit planes of 1/2〈1 1 1〉{2 2 0} that migrate only along their glide cylinder. SIA clusters also migrate along 〈1 1 1〉-directions, but do not rotate. Both single SIAs and their clusters exhibit a highly non-Arrhenius diffusivity, which originates from a combination of a temperature dependent correlation factor and the presence of very low migration barriers. At low temperature, the diffusion is approximately Arrhenius, while above room temperature, the diffusivity is a linear function of temperature. A simple model is proposed to describe these diffusion regimes and the transition between them.
  • Keywords
    molecular dynamics simulation , Vanadium , Interstitial , Diffusion , Dislocation loop
  • Journal title
    ACTA Materialia
  • Serial Year
    2005
  • Journal title
    ACTA Materialia
  • Record number

    1141335