• Title of article

    Kinetics and mechanism of periodic structure formation at SiO2/Mg interface Original Research Article

  • Author/Authors

    I. Gutman، نويسنده , , I. Gotman، نويسنده , , M. Shapiro، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2006
  • Pages
    8
  • From page
    4677
  • To page
    4684
  • Abstract
    The interaction between SiO2 (vitreous/fused silica and quartz) and Mg powder at 450–640 °C was investigated employing a combination of X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. The interaction resulted in the formation of a periodic layered structure, consisting of alternating MgO and Mg2Si-rich layers, with typical thickness of 0.5–3 μm. The reaction zone was found to grow by a parabolic law with activation energy of about 76 and 90 kJ/mol for fused silica/Mg and quartz/Mg interactions, respectively. The growth process is controlled by Mg diffusion to SiO2 substrate. A qualitative model describing the formation of such a layered structure in the SiO2/Mg system is presented.
  • Keywords
    Magnesium , Periodic layer formation , Diffusion couple , Activation energy , Silicon oxide
  • Journal title
    ACTA Materialia
  • Serial Year
    2006
  • Journal title
    ACTA Materialia
  • Record number

    1142645