• Title of article

    Understanding modulated twin transition at the atomic level Original Research Article

  • Author/Authors

    M. Han، نويسنده , , J.C. Bennett، نويسنده , , M.A. Gharghouri، نويسنده , , J. Chen، نويسنده , , C.V. Hyatt، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2007
  • Pages
    10
  • From page
    1731
  • To page
    1740
  • Abstract
    The modulated martensitic variants in a Ni–Mn–Ga ferromagnetic shape memory alloy have been characterized in detail by transmission electron microscopy (TEM). Electron diffraction confirms that at room temperature most of the martensite in this alloy exhibits the 5-layer modulated structure. Trace analysis indicates that the self-accommodated variants have a coherent twinning plane of image relative to the martensitic phase. One of the twin relations was determined to be image with image, revealing the presence of a reflection twin. Based on TEM experimental observations, a model describing the reorientation of the twinned variants on an atomic scale was developed to explain the reversible motion of the boundary. The twin transition between the variants with modulated structure is shown to involve deshuffle on the basal plane of the original variant, atomic displacement parallel to the twin boundary and shuffle again on the basal plane of the product variant.
  • Keywords
    Shape memory alloys , Twinning , Twin transition , Martensitic phase transformation
  • Journal title
    ACTA Materialia
  • Serial Year
    2007
  • Journal title
    ACTA Materialia
  • Record number

    1142899