Title of article :
Mechanical properties of undoped GaAs. III: Indentation experiments Original Research Article
Author/Authors :
Shanling Wang، نويسنده , , Pirouz Pirouz، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2007
Pages :
12
From page :
5526
To page :
5537
Abstract :
Two types of microindentation experiments, “conventional static” as well as “dynamic displacement-sensitive” tests, have been performed on the (0 0 1) surface of GaAs over a range of temperatures. The temperature dependence of hardness has been measured and, from the disappearance of indentation cracks and the measured energy density at different temperatures, the indentation brittle-to-ductile transition temperature TIBDT has been determined. Comparison of the latter with the conventional brittle-to-ductile transition temperature TBDT by the four-point bend technique indicates that TIBDT is nearly 100 °C lower than TBDT. It is argued that this lowering is because of the superimposed hydrostatic component in an indentation test. The microstructure of the plastic zone around the indentation sites has also been investigated by transmission electron microcopy. Based on the observations, the asymmetry of the dislocation rosettes and indentation cracks is discussed in terms of different mobilities of α and β dislocations in GaAs. Finally, the indentation results are compared with data from compression experiments and 4-point bend tests.
Keywords :
Fracture , Yield stress , GaAs , Compound semiconductors , Mechanical properties
Journal title :
ACTA Materialia
Serial Year :
2007
Journal title :
ACTA Materialia
Record number :
1143234
Link To Document :
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