Title of article
Crystal structure effect of ferromagnetic electrode on tunneling magnetoresistance Original Research Article
Author/Authors
J. Joshua Yang، نويسنده , , A.K. Bengtson، نويسنده , , C.-X. Ji، نويسنده , , D. Morgan، نويسنده , , Y.A. Chang، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
5
From page
1491
To page
1495
Abstract
We show experimentally the effect of the crystal structure of a ferromagnetic (FM) electrode on tunneling magnetoresistance (TMR) by changing only the crystal structure of the bottom FM electrode in a magnetic tunnel junction (MTJ) and observing a significant TMR difference. Co87Fe13 was selected as the bottom FM electrode because the difference in stability between its face-centered cubic (fcc) and body-centered cubic (bcc) structures is very small. This enables us to compare the TMR of MTJs comprising ferromagnetic layers at the same composition but with different crystal structures. We find a significant increase in the TMR when changing from an fcc-Co87Fe13 to bcc-Co87Fe13 bottom FM electrode. The structurally induced TMR enhancement is attributed to a higher s-electron spin polarization for the bcc structure, which was confirmed for bulk Co and Co87.5Fe12.5 by ab initio calculations. These results unambiguously demonstrate the role of crystal structure and the associated electronic structure of FM electrodes in spin-dependent tunneling.
Keywords
Epitaxial growth , crystal structure , Phase stability , Transport properties
Journal title
ACTA Materialia
Serial Year
2008
Journal title
ACTA Materialia
Record number
1143523
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