• Title of article

    Vacancies, interstitials and their complexes in titanium carbide Original Research Article

  • Author/Authors

    L. Tsetseris، نويسنده , , S.T. Pantelides، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2008
  • Pages
    8
  • From page
    2864
  • To page
    2871
  • Abstract
    Titanium carbide is a prototype transition-metal compound and is used in various applications due to its exceptional hardness and stability. Here we use first-principles calculations to elucidate the properties and interactions of TiC point defects and their role on the thermal stability of TiC films. We find that the stability of defects and defect complexes depends strongly on structural details. We also show via calculations of diffusion barriers that, while carbon interstitials are relatively mobile species, the migration of carbon vacancies is suppressed unless the sample is heated to extremely high temperatures. We close with a discussion on defect-related effects and a comparison with similar physical traits in transition-metal nitrides.
  • Keywords
    Thermally activated processes , Density functional theory , Superhard materials , Thin film coatings , Bulk diffusion
  • Journal title
    ACTA Materialia
  • Serial Year
    2008
  • Journal title
    ACTA Materialia
  • Record number

    1143662