Title of article :
Defect energetics and Xe diffusion in image and image Original Research Article
Author/Authors :
Younsuk Yun، نويسنده , , Peter M. Oppeneer، نويسنده , , Hanchul Kim، نويسنده , , Kwangheon Park، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2009
Pages :
5
From page :
1655
To page :
1659
Abstract :
We have performed ab initio total energy calculations to investigate the defect energetics and diffusion behavior of Xe in image and image matrices. All calculations have been carried out using density functional theory within the generalized gradient approximation and applying the projector-augmented-wave method. Our results show that the formation and migration energies of vacancy defects are more than twice as high in image compared with image. Another notable difference between the two oxides is the role played by an oxygen vacancy in the movement of a cation vacancy. An vacancy enhances the movement of a uranium vacancy by lowering its migration energy by about 1 eV, but a similar effect is not observed in image. The different behavior of cation vacancies in the two oxides strongly affects the mobility of fission gases and leads to differences in their respective diffusion behavior. We suggest that the strong resistance against oxidation of image prevents the creation and migration of defects, and results in a lower mobility of fission gases in image as compared to image.
Keywords :
Formation energy , Resistance against oxidation , Migration energy , Fission gas release , Vacancy-assisted mechanism
Journal title :
ACTA Materialia
Serial Year :
2009
Journal title :
ACTA Materialia
Record number :
1144155
Link To Document :
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