Title of article :
Mn behaviors in Mn-implanted ZnO Original Research Article
Author/Authors :
Y. Wang، نويسنده , , J. Zou، نويسنده , , Y.J. Li، نويسنده , , B. Zhang، نويسنده , , W. Lu، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2009
Pages :
9
From page :
2291
To page :
2299
Abstract :
The behavior of Mn when doped into ZnO by ion implantation was investigated by scanning transmission electron microscopy, electron energy loss spectroscopy and energy dispersive X-ray spectroscopy. Unlike the previously reported case of Co/Ni-implanted ZnO (where Co/Ni nanocrystals were observed), Mn implantation has been found to induce an O deficiency in ZnO, which results in the formation of hexagonal Zn nanocrystals when the implantation dose is sufficient. Further annealing of the high-dose Mn-implanted ZnO promotes the formation of ZnMn2O4 compounds near the surface and a porous structure within the implanted region. The fundamental reasons behind these physical phenomena are discussed.
Keywords :
Zn precipitate , Mn implanted , Ion implantation , ZnO
Journal title :
ACTA Materialia
Serial Year :
2009
Journal title :
ACTA Materialia
Record number :
1144216
Link To Document :
بازگشت