Title of article :
Microtwinning in highly nonstoichiometric VOx thin films Original Research Article
Author/Authors :
Jing Li، نويسنده , , Bryan D. Gauntt، نويسنده , , Elizabeth C. Dickey، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2010
Pages :
6
From page :
5009
To page :
5014
Abstract :
Both pulsed-DC biased and commercial ion-beam sputtered VOx thin films maintain a face-centered-cubic nanocrystalline phase, even for stoichiometries of x > 1.5, which is well outside the bulk equilibrium solubility range for cubic VOx. Many of these highly nonstoichiometric films exhibit a high density of microtwins, which give rise to unusual fine structure in the selected-area electron diffraction patterns, namely: an additional defect ring; a significant broadening of the {2 0 0} ring; pairs of parallel rod features which are tangent to the additional defect ring; and additional fine-structure features between the {2 0 0} and {2 2 0} rings. The formation of the microtwins is correlated with the coalescence of vanadium vacancies along the {1 1 1} twin planes in the crystalline lattice.
Keywords :
Bolometer materials , Transmission electron microscopy (TEM) , Thin films , Nanocrystalline microstructure , Twinning
Journal title :
ACTA Materialia
Serial Year :
2010
Journal title :
ACTA Materialia
Record number :
1145086
Link To Document :
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