• Title of article

    Interaction of a dislocation with a crack tip: From stimulated emission to avalanche generation Original Research Article

  • Author/Authors

    G. Michot، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2011
  • Pages
    8
  • From page
    3864
  • To page
    3871
  • Abstract
    Stress relaxation at a crack tip relies on the material’s ability to generate dislocations. Despite the extensive literature devoted to crack–dislocation interaction, no one has yet explained how dislocations appear and multiply in order to build a fully plastic zone. Here we will show how a simple event, such as the intersection of a unique incoming dislocation with a crack front, induces the generation of new dislocations: this effect is called “stimulated emission”. Submitted to the applied crack stress field, these dislocations can repeat the stimulation process step by step all along the crack front, through a cross-slip mechanism. Such a rapidly increasing rate of dislocations nucleation leads to a sudden growth of the plastic zone (avalanche).
  • Keywords
    Dislocation mobility , Crack–dislocation interaction , Synchrotron radiation , Semiconductor , Fracture
  • Journal title
    ACTA Materialia
  • Serial Year
    2011
  • Journal title
    ACTA Materialia
  • Record number

    1145642