Title of article :
Electronic structure of Mg2Si by combining electron diffraction and first-principles calculations Original Research Article
Author/Authors :
K. Valset، نويسنده , , E. Flage-Larsen، نويسنده , , P. Stadelmann، نويسنده , , J. Tafto، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2012
Pages :
5
From page :
972
To page :
976
Abstract :
We have used accurate convergent beam electron diffraction to determine the structure factors of the reflections most sensitive to the valence-electron distribution in Mg2Si. The experimental values agree well with calculations of the structure factors based on density functional theory. Based on the experimentally scrutinized electron structure calculations we show that this promising thermoelectric material is highly ionic, arriving at the charge image.
Keywords :
Convergent beam electron diffraction (CBED) , Semiconductor , Electronic structure , Density functional
Journal title :
ACTA Materialia
Serial Year :
2012
Journal title :
ACTA Materialia
Record number :
1146111
Link To Document :
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