• Title of article

    Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1−xCrxN films Original Research Article

  • Author/Authors

    X.F. Duan، نويسنده , , W.B. Mi، نويسنده , , Z.B. Guo، نويسنده , , H.L. Bai، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2012
  • Pages
    8
  • From page
    3690
  • To page
    3697
  • Abstract
    Reactive-sputtered epitaxial Ti1−xCrxN films are ferromagnetic in the range of 0.17 ⩽ x ⩽ 0.51 due to the Cr–N–Cr double-exchange interaction below the Curie temperature (TC). The TC first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near TC. A resistivity minimum ρmin is observed below 60 K in the films with 0.10 ⩽ x ⩽ 0.51 due to the effects of the weak localization and electron–electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below TC and the weak localization can also contribute to MR below Tmin where ρmin appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of image, which is from the side-jump mechanism.
  • Keywords
    Electrical properties , Magnetic thin films , Magnetoresistance , Nitrides , Sputtering
  • Journal title
    ACTA Materialia
  • Serial Year
    2012
  • Journal title
    ACTA Materialia
  • Record number

    1146360