Title of article :
Grain growth of silicon Original Research Article
Author/Authors :
Thomas G. Cantu، نويسنده , , Bogdan A. Popescu، نويسنده , , W. Miller، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2012
Abstract :
In this paper we report on 2-D phase-field simulations in order to study the influence of the growth kinetics and the surface energy on the growth behaviour of grains during solidification of silicon. We investigated in detail the growth of two grains.
Keywords :
A1. Growth models , B2. Semiconducting silicon , A1. Computer simulation , A1. Directional Solidification
Journal title :
ACTA Materialia
Journal title :
ACTA Materialia
