• Title of article

    Misfit accommodation in oxide thin film heterostructures Original Research Article

  • Author/Authors

    S.J. Pennycook، نويسنده , , H. Zhou، نويسنده , , M.F. Chisholm، نويسنده , , A.Y. Borisevich، نويسنده , , M. Varela، نويسنده , , J. Gazquez، نويسنده , , T.J. Pennycook، نويسنده , , J. Narayan، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2013
  • Pages
    9
  • From page
    2725
  • To page
    2733
  • Abstract
    Complex oxides are of intense interest due to their diverse properties, such as colossal magnetoresistance and superconductivity. Their complexity arises not only from the number of constituent elements, but also from their tolerance of non-stoichiometry and the structural complexity of these perovskite-based materials, e.g. the distortions and rotations of the oxygen octahedra surrounding the B-site cation. For these reasons, misfit accommodation in these materials is far more complex than in simpler materials, and can involve several different mechanisms simultaneously. In some cases, interfaces can be free from any misfit dislocations, lattice mismatch being accommodated via incorporation of oxygen vacancies, which take an ordered periodic arrangement. Interfaces may also present a perturbation to the octahedral rotations that can dramatically affect properties, not just close to the interface but through the entire film. In oxygen ion conducting materials, the oxygen sublattice may even melt in some situations.
  • Keywords
    Dislocations , Misfit relaxation , Defects , Thin films
  • Journal title
    ACTA Materialia
  • Serial Year
    2013
  • Journal title
    ACTA Materialia
  • Record number

    1146923