Title of article :
Evidence for quantum confinement effects in CdSe/ZnSe multilayer thin films prepared by the physical vapor deposition method Original Research Article
Author/Authors :
M. Melvin David Kumar، نويسنده , , Suganthi Devadason، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2013
Pages :
7
From page :
4135
To page :
4141
Abstract :
CdSe/ZnSe heterostructure multilayer thin films were prepared with different sublayer thicknesses of CdSe using the physical vapor deposition method. X-ray diffraction studies were used to calculate the average size of the particles and confirmed the (1 1 1) plane of ZnSe. Due to the stacking of alternate CdSe and ZnSe layers, stress was created in the multilayer systems. This results in quantum size effects. Experimentally measured energy values from (hν) vs. (αhν)2 dependence confirm the presence of spin–orbit split in the valence band of CdSe. The calculated band gap energies are greater than that of bulk CdSe. Crystallite sizes (12–4 nm) were calculated based on the predictions of the effective mass approximation model (i.e. Brus model). Results show that the diameters of crystallites are smaller than the Bohr exciton diameter (11.2 nm) of CdSe. Upon particle size decrease, the photoluminescence peak is shifted from the green region to the blue region. Analysis shows that the sublayer thickness of CdSe material changes the properties of CdSe/ZnSe multilayer systems.
Keywords :
Multilayers , Heterostructure , II–VI Semiconductors , Quantum confinement , Vapor deposition
Journal title :
ACTA Materialia
Serial Year :
2013
Journal title :
ACTA Materialia
Record number :
1147054
Link To Document :
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