Title of article
Direct observation of asymmetric domain wall motion in a ferroelectric capacitor
Author/Authors
Ja Kyung Lee، نويسنده , , Ga Young Shin، نويسنده , , Kyung Song، نويسنده , , Woo Seok Choi، نويسنده , , Yoon Ah Shin، نويسنده , , Seong Yong Park، نويسنده , , Jason Britson، نويسنده , , Ye Cao، نويسنده , , Long-Qing Chen، نويسنده , , Ho Nyung Lee، نويسنده , , Sang-Ho Oh، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2013
Pages
13
From page
6765
To page
6777
Abstract
We report in situ transmission electron microscopy observations of the 180° polarization switching process of a PbZr0.2Ti0.8O3 (PZT) capacitor. The preferential, but asymmetric, nucleation and forward growth of switched c-domains were observed at the PZT/electrode interfaces, arising due to the built-in electric field induced at each interface. The subsequent sideways growth of the switched domains was inhibited by the depolarization field due to the imperfect charge compensation at the counter-electrode and also at the boundaries with preexisting a-domains, which contributed further to the asymmetric switching behavior. It was found that the preexisting a-domains split into fine a- and c-domains constituting a 90° stripe domain pattern during the 180° polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.
Keywords
Ferroelectric thin film , Polarization switching , 90° Domains , Depolarization field , In situ transmission electron microscopy
Journal title
ACTA Materialia
Serial Year
2013
Journal title
ACTA Materialia
Record number
1147287
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