Title of article
Synthesis, Structure, and Properties of New Perovskite PbVO3
Author/Authors
Antipov، Evgeny V. نويسنده , , Kaul، Enrique E. نويسنده , , Geibel، Christoph نويسنده , , Shpanchenko، oman V. نويسنده , , Chernaya، Viktoria V. نويسنده , , Tsirlin، Alexander A. نويسنده , , Chizhov، Pavel S. نويسنده , , Sklovsky، Dmitry E. نويسنده , , Khlybov، Evgeny P. نويسنده , , Pomjakushin، Vladimir نويسنده , , Balagurov، Anatoly M. نويسنده , , Medvedeva، Julia E. نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2004
Pages
-3266
From page
3267
To page
0
Abstract
The new perovskite PbVO3 was synthesized under hightemperature and high-pressure conditions. Its crystal structure (a = 3.80005(6) A, c = 4.6703(1) A, Z = 1, S.G. P4mm) contains isolated layers of corner-shared VO5 pyramids, which are formed instead of octahedra due to a strong tetragonal distortion (c/a = 1.23). The lead atom is shifted out of the center of the unit cell toward one of two [VO2]-layers due to the influence of the lone pair. This new perovskite exhibits a semiconductor (rho)-like (T) dependence down to 2 K. This behavior can be qualitatively explained by taking into account strong electron correlations in electronic structure calculations.
Journal title
CHEMISTRY OF MATERIALS
Serial Year
2004
Journal title
CHEMISTRY OF MATERIALS
Record number
115465
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